2SB861 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

Product specification
TO-220-3L Plastic-Encapsulate Transistors
2SB861 TRANSISTOR (PNP)
FEATURES
z Low Frequency Power Amplifier Color
TV Vertical Deflection Output
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-200
-150
-6
-2
1.8
69
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
*Pulse test
Symbol
Test conditions
Min Typ
V_(BR)CBO
V_(BR)CEO*
I_C=-5mA,I_E=0
I_C=-50mA,I_B=0
-200
-150
V_(BR)EBO I_E=-5mA,I_C=0
-6
I_CBO
V_CB=-120V,I_E=0
I_EBO
V_EB=-5V,I_C=0
h_FE(1)
V_CE=-4V, I_C=-50mA
60
h_FE(2)*
V_CE=-10V, I_C=-500mA
60
V_CE(sat) I_C=-500mA,I_B=-50mA
V_BE
V_CE=-4V, I_C=-50mA
C_ob
V_CB=-100V,I_E=0, f=1MHz
30
Max
-1
-1
200
-3
-1
Unit
V
V
V
μA
μA
V
V
pF
CLASSIFICATION OF h_FE(1)
RANK
RANGE
B
60-120
C
100-200
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