2SB831 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Product specification
2SB831
Features
Low frequency amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-20
V
VEBO
-5
V
IC
-0.7
A
ICP
1
A
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio *
Collector to emitter saturation voltage *
Base to emitter voltage *
* Pulse test.
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
hFE VCE = -1 V, IC = -0.15 A
VCE(sat) IC = -0.5 A, IB = -0.05 A
VBE VCE = -1 V, IC = -0.15 A
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-25
V
-20
V
-5
V
-1 mA
85
240
-0.5 V
-1 V
hFE Classification
Marking
hFE
BB
85 170
BC
120 240
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