2SB806 Datasheet, PDF (1/3 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Features
High collector to emitter voltage: VCEO -120V.
Product specification
2SB806
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Collector power dissipation
Junction temperature
Storage temperature
*1. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transition frequency
* PW 350µs,duty cycle 2%
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-0.7
A
IC(pu)
-1.2
A
Pc
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = -120V, IE=0
IEBO VEB = -5V, IC=0
VCE =-1V , IC = -100mA
hFE
VCE =-1V , IC = -5.0mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
VBE VCE =-10V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
fT VCE = -10V , IE = 10mA
Min
90
45
-550
Typ
200
200
-0.4
-0.9
-620
14
75
Max
-100
-100
400
-0.6
-1.5
-650
Unit
nA
nA
V
V
mV
pF
MHz
hFE Classification
Marking
hFE
KR
90 180
KQ
135 270
KP
200 400
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