2SB804 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Features
World standard miniature package:SOT-89
High collector to base voltage:VCBO -100V
Excellent DC current gain linearity.
Product specification
2SB804
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-100
V
VCEO
-80
V
VEBO
-5
V
IC
-1
mA
IC
-1.5
mA
PT
2
W
Tj
150
Tstg
-55 to +150
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = -100 V, IE = 0
IEBO VEB = -5.0 V, IC = 0
VCE = -2.0 V, IC = -100 mA
hFE
VCE = -2.0 V, IC = -500 mA
VCE(sat) IC = -500mA, IB = -50mA
VBE(sat) IC = -500mA, IB = -50mA
VBE VCE = -10 V, IC = -10 mA
fT VCE = -5.0 V, IE = 10 mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
AW
90 180
AV
135 270
AU
200 400
Min Typ Max
-100
-100
90 200 400
25 80
-0.29 -0.5
-0.9 -1.5
-600 -640 -700
80
26
Unit
nA
nA
V
V
mV
MHz
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1