2SB798 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Product specification
2SB798
Features
World standard miniature package:SOT-89
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA)
Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-5
V
IC
-1
A
IC
1.5
A
PT
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = -30 V, IE = 0
IEBO VEB = -5.0 V, IC = 0
VCE = -1.0 V, IC = -100 mA
hFE
VCE = -1.0 V, IC = -1.0A
VCE(sat) IC = -1A, IB = -0.1A
VBE(sat) IC = -1A, IB = -0.1A
VBE VCE = -6.0 V, IC = -10 mA
fT VCE = -6.0 V, IE = 10 mA
Cob VCB = -6.0 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
DM
90 180
DL
135 270
DK
200 400
Min Typ Max
-100
-100
90 200 400
50 100
-0.25 -0.4
-1.0 -1.2
-600 -640 -700
110
36
Unit
nA
nA
V
V
mV
MHz
pF
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