2SB792 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Product specification
2SB792,2SB792A
Features
High collector-emitter voltage VCEO
Low noise voltage NV
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB792
-150
V
VCBO
2SB792A
-185
V
Collector-emitter voltage
2SB792
-150
V
VCEO
2SB792A
-185
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-50
mA
Peak collector current
ICP
-100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
2SB792
2SB792A
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
2SB792
2SB792A
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
hFE Classification
Marking
2SB792
2SB792A
Rank
hFE
IR
2FR
R
130 220
Symbol
Testconditons
Min Typ Max Unit
VCEO IC = -100 ìA, IB = 0
-150
V
-185
V
VEBO IE = -10 ìA, IC = 0
-5
V
ICBO VCB = -100 V, IE = 0
-1 ìA
hFE VCE = -5 V, IC = -10 mA
130
450
130
330
VCE(sat) IC = -30 mA, IB = -3 mA
-1 V
fT VCE = -10 V, IC = -10 mA, f = 200 MHz
200
MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
4
pF
NV
VCE = -10 V, IC = -1 mA, GV = 80 dB
Rg = 100KÙ, Function = FLAT
150
mV
IS
2FS
S
185 330
IT
T
260 450
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