2SB772 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON POWER TRANSISTOR

SMD Type
■ Features
● PNP transistor High current output up to 3A
● Low Saturation Voltage
● Complement to 2SD882
Product specification
2SB772
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-30
V
VEBO
-6
V
IC
-3
A
Pc
0.5
W
TJ
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test Conditons
Ic=-100uA ,IE=0
IC= -10 mA , IB=0
IE= -100 uA ,IC=0
VCB=-40 V , IE=0
VEB=-6V , IC=0
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB=- 0.2A
IC=-2A, IB= -0.2A
VCE=-5 V, IC=-0.1mA,f = 10MHz
■ hFE Classification
Rank
hFE
R
60～120
Q
100～200
P
160～320
E
200～400
Min Typ Max Unit
-40
V
-30
V
-6
V
-1 μA
-1 μA
60
400
32
-0.5 V
-1.5 V
50
MHz
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