2SB709A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Product specification
2SB709A
Features
High forward current transfer ratio hFE.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-45
V
VCEO
-45
V
VEBO
-7
V
IC
-100
mA
ICP
-200
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base current
Collector-emitter current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -2 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0 A
ICEO VCE = -10 V, IB = 0 A
hFE VCE = -10 V, IC = -2 mA
VCE(sat) IC = -100 mA, IB = -10 mA
fT VCB = -10 V, IE = 1 mA , f = 200 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-45
V
-45
V
-7
V
-0.1 ìA
-100 ìA
160
460
-0.3 -0.5 V
80
MHz
2.7
pF
hFE Classification
Marking
hFE
BQ
160 260
BR
210 340
BS
290 460
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