2SB688 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,120V,80W)

Product specification
TO-3P Plastic-Encapsulate Transistors
2SB688 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z Complement to Type 2SD718
APPLICATIONS
z Power Amplifier Applications
TO – 3P
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-8
3
42
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_EBO
h_FE*
V_CE(sat)*
V_BE*
C_ob
f_T
Test conditions
I_C=-100µA,I_E=0
I_C=-50mA,I_B=0
I_E=-100µA,I_C=0
V_CB=-120V,I_E=0
V_EB=-5V,I_C=0
V_CE=-5V, I_C=-1A
I_C=-5A,I_B=-500mA
V_CE=-5V, I_C=-5A
V_CB=-10V,I_E=0, f=1MHz
VCE=-5V,IC=-1A, f=1MHz
Min Typ Max Unit
-120
V
-120
V
-5
V
-10
μA
-10
μA
55
160
-2.5
V
-1.5
V
280
pF
10
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
R
55-110
O
80-160
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