2SB649A Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

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Features
Collector-Emitter Voltage :-160V
Collector Current :-1.5A
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Product specification
2SB649A
1 Emitter
2 Collector
3 Base
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-180
-160
-5
-1.5
1
150
-55to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-Emitter Voltage
DC current gain
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC=-1mA, IE=0
VCEO IC=-10mA, RBE=
VEBO IE=-1mA, IC=0
ICBO VCB=-160V IE=0
VCE(sat) IC=-600mA,IB=-50mA
VBE VCE=5V, IC=150mA
VCE=-5V,IC=-150mA
hFE
VCE=-5V,IC=-500mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
fT VCE=-5V, IC=-0.15A
hFE Classification
Rank
hFE
B
60 to 120
C
100 to 200
Unit
V
V
V
A
W
Min Typ Max Unit
-180
V
-160
V
-5
V
-10
A
-1 V
-1.5 V
60
200
30
27
pF
140
MHz
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