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| 2SB560 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency Power Amp Applications | |||
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Product specification
TO-92MOD Plastic-Encapsulate Transistors
2SB560 TRANSISTOR (PNP)
TO-92MOD
FEATURES
z High Reverse Voltage
z Low Saturation Voltage
z Suitable Universal AF Power Amplifier Use
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.7
A
PC
Collector Power Dissipation
900
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage V(BR)CBO IC= -10 uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC= -1 mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE= -10 μA, IC=0
Collector cut-off current
ICBO
VCB= -20 V , IE=0
Collector cut-off current
IEBO
VEB= -4V , IB=0
DC current gain
hFE(1)
hFE(2)
VCE= -5V, IC= -50mA
VCE= -5V, IC= -500mA
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB= -50mA
Base-emitter saturation voltage
VBE(sat) IC=-500 mA, IB= -50mA
Transition frequency
fT
VCE=-10V, IC=-50mA
Out capacitance
Cob VCB= -10 V ,f=1MHZ
Min
-100
-80
-5
60
30
Typ
Max
Unit
V
V
V
-1
μA
-1
μA
560
-0.3
-0.85
100
15
-0.8
V
-1.2
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
D
60 - 120
E
100 - 200
F
160 - 320
G
280 - 560
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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