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| 2SB507 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W) | |||
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Product specification
TO-220-3L Plastic-Encapsulate Transistors
2SB507 TRANSISTOR (PNP)
FEATURES
z Low Collector-Emitter Saturation Voltage
Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A
z DC Current Gain hFE=40~320@IC=-1A
z Complementray to NPN 2SD313
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
-60
V
-60
V
-5
V
-3
A
1.75
W
150
â
-55-150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-100μA, IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA, IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-20V, IE=0
Collector cut-off current
ICEO
VCE=-60V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain (1)
hFE(1) (1)
VCE=-2V, IC=-1A
40
hFE(2) (1)
VCE=-2V, IC=-0.1A
40
Collector-emitter saturation voltage(1)
VCE(sat) (1) IC=-2A, IB=-200mA
Base-emitter voltage(1)
VBE(1)
VCE=-2V, IC=-1A
Transition frequency
fT
VCE=-5V, IC=-500mA,f=1MHz
5
(1)Pulse Test: Pulse Width=300μs,Duty Cycleâ¤2.0%
CLASSIFICATION OF hFE(1)
Rank
C
D
E
Range
40-80
60-120
100-200
Typ Max Unit
V
V
V
-100 μA
-5
mA
-1
mA
320
-1
V
-1.5
V
MHz
F
160-320
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