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| 2SB1658 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
2SB1658 TRANSISTOR (PNP)
TO â 126
FEATURES
z Low VCE(sat)
z High DC Current Gain
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-30
-6
-5
1
125
150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)
Cob
fT
Test conditions
IC= -100µA,IE=0
IC=-1mA,IB=0
IE= -100µA,IC=0
VCB=-30V,IE=0
VEB=-6V,IC=0
VCE=-2V, IC=-1A
VCE=-2V, IC=-4A
IC=-1A,IB=-50mA
IC=-2A,IB=-100mA
IC=-4A,IB=-200mA
IC=-1A,IB=-100mA
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-50mA
Min Typ Max Unit
-30
V
-30
V
-6
V
-0.1 μA
-0.1 μA
150
600
50
-0.15 V
-0.25 V
-0.5 V
-1.5 V
100
pF
95
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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