2SB1574 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency output amplification)

Product specification
2SB1574
Features
Possible to tsolder radiation fin directly to printed circuit boad.
Type with universal characteristics.
High collector-base voltage (Emitter open) VCBO.
High collector-emitter voltage (Base open) VCEO.
Large collector current IC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-2
A
ICP
-3
A
PC
10
W
Tj
150
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff curent
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
Min Typ Max Unit
VCBO IC = -10 ìA, IE = 0
-50
V
VCEO IC = -1 mA, IB = 0
-50
V
VEBO IE = -10 ìA, IC = 0
-5
V
ICBO VCB = -10 V,IE = 0
-0.1 ìA
VCE = -2 V, IC = -200 mA
hFE
VCE = -2 V, IC = -1A
120
340
V
60
VCE(sat) IC = -1 A, IB = -50 mA
-0.2 -0.3 V
VBE(sat) IC = -1 A, IB = -50 mA
-0.85 -1.2 V
fT VCE = -10 V, IC = -50 mA , f = 200 MHz
80
MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
45 60 pF
hFE Classification
Rank
hFE
R
120 240
S
170 340
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1