2SB1475 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

Product specification
2SB1475
Features
Super miniature package.
High DC current IC(DC)=500mA max.
Low VCE(sat): VCE(sat)=-60mV at -100mA
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-16
V
VEBO
-6
V
IC
-500
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 µs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = -16 V, IE = 0
IEBO VEB = -6.0 V, IC = 0
hFE VCE = -1.0 V, IC = -100 mA
IC = -100 mA, IB = -10 mA
VCE(sat)
IC = -500 mA, IB = -20 mA
VBE(sat) IC = -2A, IB = -0.1A
VBE VCE = -1.0 V, IC = -10 mA
fT VCE = -3.0 V, IE = 100 mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
B42
110 240
B43
190 320
B44
270 400
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
-100 nA
-100 nA
110 200 400
-60 -120 mV
-250 -400 mV
-0.95 -1.2 V
-0.66 -0.7 V
50
MHz
15 pF
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