2SB1427 Datasheet, PDF (1/1 Pages) Rohm – Power transistor (-20V, -2A)

Features
Low saturation voltage,
typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA.
Excellent DC current gain characteristics.
Product specification
2SB1427
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Marking
Marking
BJE
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-20
V
VEBO
-6
V
IC
-2
A
ICP *
-3
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-16V
IEBO VEB=-5V
VCE(sat) IC=-1A,IB=-500mA
hFE VCE=-6V, IC=-0.5A
Cob VCE=-10V, IE=10mA, f=30MHz
fT VCB=-10V, IE=0A, f=1MHz
Min Typ Max Unit
-20
V
-20
V
-6
V
-0.5 ìA
-0.5 ìA
-0.5 V
390
820
90
MHz
30
pF
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