2SB1426 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Product specification
TO-92 Plastic-Encapsulate Transistors
2SB1426 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching and Amplification
TO – 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-20
-6
-3
750
166
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat) ^*
C_ob
f_T
Test conditions
I_C= -0.05mA,I_E=0
I_C=-1mA,I_B=0
I_E=-0.05mA,I_C=0
V_CB=-20V,I_E=0
V_EB=-5V,I_C=0
V_CE=-2V, I_C=-0.1A
I_C=-2A,I_B=-0.1A
V_CB=-10V,I_E=0, f=1MHz
VCE=-2V,IC=-0.5A, f=100MHz
Min Typ Max Unit
-20
V
-20
V
-6
V
-0.1 μA
-0.1 μA
82
390
-0.5 V
35
pF
240
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1