2SB1424 Datasheet, PDF (1/1 Pages) Rohm – Low Vce(sat) Transistor (-20V, -3A)

Features
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A)
Excellent DC current gain characteristics.
PNP silicon transistor
Product specification
2SB1424
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* Single pulse Pw=10ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-20
V
VEBO
-6
V
IC
-3
A
ICP *
-5
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCBO IC= -50ìA
VCEO IC= -1mA
VEBO IE= -50ìA
IcBO VCB= -20V
IEBO VEB= -5V
hFE VCE=-2V, IC= -0.1A
VCE(sat) IC/IB= -2A/ -0.1A
Cob VCB= -10V, IE=0A, f=1MHz
fT VCE= -2V, IE=0.5A, f=100MHz
Min Typ Max Unit
-20
V
-20
V
-6
V
-0.1
A
-0.1
A
120
390
-0.5 V
35
pF
240
MHz
hFE Classification
Marking
Rank
hFE
AEQ
Q
120 270
AER
R
180 390
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