2SB1412 Datasheet, PDF (1/1 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR

Product specification
2SB1412
Features
Low VCE(sat).
PNP silicon transistor.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse ,PW=10ms
(Tc=25 )
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC
Tj
Tstg
Rating
-30
-20
-6
-5
-10
-10
1
10
150
-55 to +150
Unit
V
V
V
A(DC)
A (Pulse)*
A
W
W
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-20V
IEBO VEB=-5V
VCE(sat) IC= -4A, IB= -0.1A
hFE VCE= -2V, IC= -0.5A
fT VCE= -6V, IE=50mA, f=100MHz
Cob VCB= -20V,IE=0A,f=1MHz
Min Typ Max Unit
-30
V
-20
V
-6
V
-0.5 ìA
-0.5 ìA
-0.35 -1.0 V
82
390
120
MHz
60
pF
hFE Classification
Rank
hFE
P
82 180
Q
120 270
R
180 390
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1