2SB1409S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Triple Diffused Type Transistor

Product specification
2SB1409S
Features
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 Value at TC = 25 .
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-180
V
VCEO
-160
V
VEBO
-5
V
IC
-1.5
A
IC(peak)
-3
A
PC*1
18
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
* Pulse test.
hFE Classification
TYPE
hFE
B
60 to 120
C
100 to 200
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE
fT
Cob
Testconditons
IC = -1 mA, IE = 0
IC = -10 mA, RBE =
IE = -1 mA, IC = 0
VCB = -160 V, IE = 0
VCE = -5 V, IC = -150 mA*
VCE = -5 V, IC = -500 mA*
IC= -500 mA, IB = -50 mA
VCE = -5 V, IC = -150 mA
VCE = -5 V, IC = -150 mA
VCB = -10 A, IE = 0, f = 1 MHz
Min Typ Max Unit
-180
V
-160
V
-5
V
-10 ìA
60
200
30
-1 V
-1.5 V
240
MHz
25
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
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