2SB1407S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon PNP Epitaxial

Product specification
2SB1407S
Features
Low frequency power amplifier.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-35
V
VCEO
-35
V
VEBO
-5
V
IC
-2.5
A
ICP
-3
A
PC
18
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Symbol
Testconditons
V(BR)CBO IC = -1 mA, IE = 0
V(BR)CEO IC = -10 mA, RBE =
V(BR)EBO IE = -1 mA, IC = 0
ICBO VCB = -35 V, IE = 0
VCE = -2 V,IC = -0.5 A
hFE
VCE = -2 V,IC = -1.5 A
VBE VCE = -2 V,IC = -1.5 A
VCE(sat) IC = -2 A,IB = -0.2 A
Min Typ Max Unit
-35
V
-35
V
-5
V
-20 ìA
60
320
20
-1.5 V
-1.0 V
hFE Classification
Rank
hFE
B
60 120
C
100 200
D
160 320
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