2SB1397 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Compact Motor Driver Applications

Product specification
2SB1397
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Collector current (pulse)
ICP
-4
A
Collector dissipation
PC *
1.3
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board (250mm²X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Symbol
Testconditons
ICBO
VCB = -20V , IE = 0
VCE = -2V , IC = -0.5A
hFE
VCE = -2V , IC = -2A
fT
VCE = -2V , IC = -0.5A
Cob
VCB = -10V , f = 1MHz
VCE(sat) IC = -1A , IB = -50mA
VBE(sat) IC = -1A , IB = -50mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO1 IC = -10ìA , RBE =
V(BR)CEO2 IC = -10mA , RBE =
VF
IF=0.5A
RBE
Min Typ Max Unit
-1 nA
70
50
300
MHz
40
pF
-0.25 -0.5 V
-1.5 V
-25
V
-25
V
-20
-1.5 V
1.6
KÙ
Marking
Marking
BP
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