2SB1396 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – DC-DC Converter,Motor Driver Applications

Features
Adoption of FBET,MBIT processes
Large current capacity
Low collector to emitter saturation voltage
Product specification
2SB1396
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-3
A
Collector current (Pulse)
ICP
-5
A
Collector dissipation *
PC *
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic PCB (250mm²X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Testconditons
VCB = -12V, IE=0
VEB = -6V, IC=0
VCE =-2V , IC = -0.5A
VCE =-2V , IC = -3A
VCE =-2V , IC = -0.3A
VCE = -10V , f=1MHz
IC=-1.5A,IB=-30mA
IC=-1.5A,IB=-30mA
IC=-10ìA,IE=0
IC=-1mA,RBE=
IE=-10ìA,IC=0
hFE Classification
Marking
Rank
hFE
S
140 280
BO
T
200 400
U
280 560
Min Typ Max Unit
-100 ìA
-100 ìA
140
560
70
400
GHz
26
pF
-220 -400 mV
-0.9 -1.2 V
-15
V
-10
V
-7
V
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4008-318-123
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