2SB1375 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER)

Product specification
TO-220-3L Plastic-Encapsulate Transistors
2SB1375 TRANSISTOR (PNP)
FEATURES
z High Power Dissipation: P_C=25W(T_C=25℃)
z Low voltage:V_CE(sat)=-1.5V(Max)(I_C=-2A,I_B=-0.2A)
z Collector Metal(Fin)is Coverd with Mold Regin
z Complementary to 2SD2012
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-60
V
-60
V
-7
V
-3
A
2
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-100µA,I_E=0
V_(BR)CEO I_C=-50mA,I_B=0
V_(BR)EBO I_E=-100µA,I_C=0
I_CBO
V_CB=-60V,I_E=0
I_EBO
V_EB=-7V,I_C=0
h_FE(1) V_CE=-5V,I_C=-0.5A
h_FE(2) V_CE=-5V,I_C=-2A
V_CE(sat) I_C=-2A,I_B=-0.2A
V_BE
V_CE=-5V,I_C=-0.5A
f_T
V_CE=-5V,I_C=-0.5A
C_ob
V_CB=-10V,I_E=0,f=1MHz
Min
Typ Max Unit
-60
V
-60
V
-7
V
-10
µA
-10
µA
100
320
15
-1.5
V
-1
V
9
MHz
50
pF
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