2SB1295 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amp Applications

Product specification
2SB1295
Features
Large current capacity.
Low collector to emitter saturation voltage.
Very small-sized package permitting sets to be made
smaller and slimer.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-15
V
VCEO
-15
V
VEBO
-5
V
IC
-0.8
A
ICP
-3
A
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Testconditons
ICBO VCB = -12V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -2V , IC = -50mA
fT VCE = -2V , IC = -50mA
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -5mA , IB = -0.5mA
VCE(sat) IC = -400mA , IB = -20mA
VBE(sat) IC = -400mA , IB =-20mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO ^{IC = -1mA , RBE =}
V(BR)EBO ^{IE = -10ìA , IC = 0}
hFE Classification
Marking
Rank
hFE
5
135 270
UL
6
200 400
7
300 600
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-100 nA
-100 nA
135
600
300
MHz
15
pF
-10 -25 mV
-100 -200 mV
-0.9 -1.2 V
-15
V
-15
V
-5
V
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1