2SB1275 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-160V , -1.5A)

Product specification
2SB1275
Features
High breakdown voltage.(BVCEO = -160V)
Low collector output capacitance.
Typ. 30pF at VCB = 10V
High transition frequency.(fT = 50MHZ)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-160
-160
-5
-1.5
-3
1
10
150
?55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W(Tc=25 )
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
hFE Classification
TYPE
hFE
P
82 to 180
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Testconditons
IC = -50ìA
IC = -1mA
IE = -50ìA
VCB = -120V
VEB = -4V
IC/IB = -1A/-0.1A
VCE = -5V , IC = -0.1A
VCE = -5V , IE = 0.1A , f = 30MHz
VCB = -10V , IE =0A , f = 1MHz
Min Typ Max Unit
-160
V
-160
V
-5
V
-1 ìA
-1 ìA
-2
V
82
180
50
MHz
30
pF
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