2SB1261-Z Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR MP-3

Product specification
2SB1261-Z
Features
Low VCE(sat): VCE(sat) -0.3V.
High hFE.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current pulse *1
Base current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-7
V
IC
-3
A
ICP
-5
A
IB
-0.5
A
2 *2
W
PT
10
W
Tj
150
Tstg
-55 to +150
*1 PW 10ms,duty cycle 50%.
*2 When mounted on ceramic substrate of 7.5cm² X0.7mm
Unit: mm
1 Base
2 Collector
3 Emitter
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2