2SB1260 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor

Product specification
2SB1260
Features
High breakdown voltage and high
current.BVCEO= -80V, IC=-1A
Good hFE linearity.
Low VCE(sat).
Epitaxial planar type
PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5
V
IC
-1
A
ICP *
-2
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-60V
IEBO VEB=-4V
hFE VCE=-3V, IC=-0.1A
VCE(sat) IC=-500mA,IB=-50mA
Cob VCE=-5V, IE=50mA, f=30MHz
fT VCB=-10V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
BE
Q
120 270
R
180 390
Min Typ Max Unit
-80
V
-80
V
-5
V
-1 ìA
-1 ìA
82
390
-0.4 V
100
MHz
25
pF
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