2SB1219 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Product specification
2SB1219
Features
Large collector current IC.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-5
V
ICP
-1
A
IC
-500
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 µA, IE = 0
VCEO IC = -2 mA, IB = 0
VEBO IE = -10 µA, IC = 0
ICBO VCB = -20 V, IE = 0
hFE VCE = -10 V, IC = -150 mA
VCE(sat) IC = -300 mA, IB = -30 mA
VBE(sat) IC = -300 mA, IB = -30 mA
fT VCB = -10 V, IE = 50 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-30
V
-25
V
-5
V
-0.1 ìA
85
340
-0.35 -0.6 V
-1.1 -1.5
200
MHz
6 15 pF
hFE Classification
Marking
hFE
CQ
85 170
CR
120 240
CS
170 340
C
85 340
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