2SB1198K Datasheet, PDF (1/2 Pages) Rohm – Low-frequency Transistor(-80V, -0.5A)

Features
Low VCE(sat).VCE(sat)=-0.2V
V CE(sa t )= -0.2V
High berakdown voltage.
BVC EO=-80V
Product specification
2SB1198K
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
P ara me ter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Sy m bol
R ati ng
Unit
VCB O
-80
VCE O
-80
V
V EB O
-5
IC
-0.5
A
PC
0.2
W
TJ
1 50
Ts tg
-55 to 150
Electrical Characteristics Ta = 25
P aram ete r
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Classification of hfe(1)
Rank
Q
hFE
120-270
R
180-390
Sy m bol
Te st co ndi tons
VCBO Ic= -50 µA IE=0
VCEO Ic= -2 mA IB=0
VEBO IE= -50 A IC =0
ICBO VCB= -50 V , IE=0
IEBO VEB= -4V , IC=0
hFE VCE= -3V, IC= -100mA
VCE(sat) IC=-0.5A, IB=-50mA
C ob VCB= ?10V, IE=0mA, f=1MHz
fT VCE= -10V, IE= 50mA,f=100MHz
Min Typ Max Unit
-8 0
-8 0
V
-5
-0.5
uA
-0.5
1 20
3 90
-0.2 -0.5 V
11
PF
1 80
M Hz
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