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| 2SB1198 Datasheet, PDF (1/1 Pages) Unisonic Technologies – LOW FREQUENCY PNP TRANSISTOR | |||
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Product specification
SOT-23 Plastic-Encapsulate Transistors
2SB1198 TRANSISTOR (PNP)
FEATURES
z Low VCE(sat)
z High breakdown voltage
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-500
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-50μA, IE=0
Collector-emitter breakdown voltage = V(BR)CEO IC=-2mA, IB 0
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA, IC=0
Collector cut-off current
= ICBO VCB=-50V, IE 0
Emitter cut-off current
= IEBO VEB=-4V, IC 0
DC current gain
hFE(1) VCE=-3= V, IC -100mA
Collector-emitter saturation voltage
VCE(sat)= IC=-500mA, IB -50mA
Transition frequency
fT
VCE=-10V, IC=-50mA, f=100MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
Q
120-270
AKQ
MIN TYP MAX UNIT
-80
V
-80
V
-5
V
-0.5 μA
-0.5
μA
120
390
-0.5
V
180
MHz
11
pF
R
180-390
AKR
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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