2SB1197 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors

Product specification
SOT-23 Plastic-Encapsulate Transistors
2SB1197 TRANSISTOR (PNP)
FEATURES
z Low V_CE(sat).V_CE(sat)<-0.5V(I_C / I_B = -0.5A /-50mA)
z I_C =-0.8A.
z Complements the 2SD1781.
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-0.8
200
150
-55-150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
Min
V_(BR)CBO I_C =-50μA, I_E=0
-40
V_(BR)CEO I_C = -1mA, I_B=0
-32
V_(BR)EBO I_E= -50μA, I_C=0
-5
I_CBO
V_CB=-20V,I_E=0
I_EBO
V_EB= -4V,I_C=0
h_FE
V_CE=-3V,I_C= -100mA
82
V_CE(sat)
I_C=-500 mA, I_B= -50mA
V_CE=-5V, I_C= -50mA,
f_T
50
f=100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
AHP
Q
120-270
AHQ
Typ
Max Unit
V
V
V
-0.5 μA
-0.5 μA
390
-0.5
V
200
MHz
12
30
pF
R
180-390
AHR
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