2SB1189 Datasheet, PDF (1/1 Pages) Rohm – Medium power transistor (-80V, -0.7A)

Features
High breakdown voltage, BVCEO=-80V, and
high current, IC=-0.7A.
Product specification
2SB1189
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5
V
IC
-0.7
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
Testconditons
BVCBO IC = -50 A
BVCEO IC = -2mA
BVEBO IE = -50 A
ICBO VCB = -50V
IEBO VEB = -4V
VCE(sat) IC = -500mA , IB = -50mA
hFE VCE = -3V , IC = -0.1A
fT VCE = -10V , IE = 50mA , f = 100MHz
Cob VCB = -10V , IE = 0, f = 1MHz
Min Typ Max Unit
-80
V
-80
V
-5
V
-0.5 ìA
-0.5 ìA
-0.2 -0.4 V
82
390
100
MHz
14 20 pF
hFE Classification
Marking
Rank
hFE
P
82 180
BD
Q
120 270
R
180 390
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