2SB1185 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Product specification
TO-220-3L Plastic-Encapsulate Transistors
2SB1185 TRANSISTOR (PNP)
FEATURES
z Low Collector Saturation Voltage
z Complement to Type 2SD1762
APPLICATIONS
z For Use in Low Frequency Power Amplifier Applications
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-3
2
63
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-50µA,I_E=0
-60
V
V_(BR)CEO I_C=-1mA,I_B=0
-50
V
V_(BR)EBO I_E=-50µA,I_C=0
-5
V
I_CBO
V_CB=-40V,I_E=0
-1
μA
I_EBO
V_EB=-4V,I_C=0
-1
μA
h_FE*
V_CE=-3V, I_C=-0.5A
60
320
V_CE(sat)* I_C=-2A,I_B=-0.2A
-1
V
V_BE
*
(sat)
I_C=-2A,I_B=-0.2A
-1.5
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
50
pF
f_T
VCE=-5V,IC=-0.5A, f=30MHz
70
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
D
60-120
E
100-200
F
160-320
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