2SB1132 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

SMD Type
Product specification
2SB1132
Features
Low VCE(sat)
Compliments to 2SD1664
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
(DC)
-1
A
IC
Single pulse, PW=100ms
-2
A
Collector Power Dissipation
PC *
0.5
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* mounted on a 40x40x0.7mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -20V , IE = 0
IEBO VEB = -4V , IC = 0
V(BR)CBO IC = -50uA , IE = 0
V(BR)CEO IC = -1mA , IB = 0
V(BR)EBO IE = -50uA
hFE VCE = -3V , IC = -0.1A
fT VCE = -5V , IE = 50mA , f = 30MHz
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.5 ìA
-0.5 ìA
-40
V
-32
V
-5
82
390
150
MHz
20 30 pF
hFE Classification
Marking
Rank
hFE
P
82 180
BA
Q
120 270
R
180 390
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