2SB1125 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Driver Applications

SMD Type
Features
High DC Current gain.
Large Current Capaity and wie ASO
TransistIoCrs
Product specification
2SB1125
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-80
-50
-10
-0.7
-2
500
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Gain bandwidth product
Symbol
Testconditons
VCBO IC = -10 A , IE = 0
VCEO IC = -1mA , RBE =
VEBO IE = -10ìA , IC = 0
ICBO VCB = -40V , IE = 0
IEBO VCB = -8V , IE = 0
VCE = -2V , IC = -50mA
hFE
VCE = -2V , IC = -500mA
VCE(sat) IC = -100mA , IB = -0.1mA
VBE(sat) IC = -100mA , IB = -0.1mA
Cob VCB = -10V , f = 1MHz
fT VCE = -5V , IC = -50mA
Marking
Marking
BH
Unit
V
V
V
A
A
mW
Min Typ Max Unit
-80
V
-50
V
-10
V
-100 nA
-100 nA
5000
3000
-0.8 -1.2 V
-1.3 -2.0 V
18
pF
200
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
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