2SB1123 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Current Switching Applications

Product specification
2SB1123
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Collector current (pulse)
ICP
-4
A
Collector dissipation
PC
0.5
W
Mounted on a ceramic board (250mm250.8mm)
1.3
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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