2SB1122 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Low-Frequency Power Amp Applications

Features
Adoption of FBET process..
Very small size making it easy to provide highdensity
hybrid IC’s.
Product specification
2SB1122
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5
V
IC
-1
A
ICP
-2
A
PC
500
mW
Tj
150
Tstg
-55 to +150
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