2SB1114 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Features
World standard miniature package.
High DC current gain hFE=135 to 600.
Low VCE(sat): VCE(sat)=-0.3V at 1.5A
Product specification
2SB1114
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current (pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* Pulsed: PW 10 ms, duty cycle
50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
ZM
135 270
ZL
200 400
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-20
V
VEBO
-6
V
IC
-2
A
IC
-3
A
PT
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = 16 V, IE = 0
IEBO VEB = -6.0 V, IC = 0
VCE = -2.0 V, IC = -100 mA
hFE
VCE = -2.0 V, IC = -2.0mA
VCE(sat) IC = -1.5A, IB = -50 mA
VBE(sat) IC = -1.5A, IB = -50 mA
VBE VCE = -6.0 V, IC = -100 mA
fT VCE = -10 V, IE = 50 mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
ZK
300 600
Min Typ Max Unit
-100 nA
-100 nA
135 350 600
40
-0.3 -0.5 V
-1.05 -1.2 V
-0.65 -0.68 -0.75 V
180
MHz
60
pF
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