2SB1027 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Features
Low frequency amplifier
Product specification
2SB1027
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)*1
PC*2
Tj
Tstg
*1 PW 10 ms, Duty cycle 20%
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)
Rating
-180
-160
-5
-1.5
-3
1
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE
Testconditons
IC = -1 mA, IE = 0
IC = -10 mA, RBE =
IE = -1 mA, IC = 0
VCB = -160 V, IE = 0
VCE = -5 V, IC = -0.15 A,
VCE = -5 V, IC = -0.5 A,
IC = -0.5 A, IB = -50 mA,
VCE = -5 V, IC = -0.15 A,
hFE Classification
Marking
hFE
EH
60 to 120
EJ
100 to 200
EK
160 to 320
Unit
V
V
V
A
A
W
Min Typ Max Unit
-180
V
-120
V
-5
V
-10 ìA
60
320
30
-1.0 V
-0.9 V
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