2SB1000 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366

Features
Low frequency amplifier.
Product specification
2SB1000
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-20
V
VEBO
-5
V
IC
-1
A
ICP *
-1.5
A
PC
1
W
Tj
150
Tstg
-55 to +150
* PW 10 ms; d 0.02.
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio *
Collector to emitter saturation voltage *
Base to emitter saturation voltage *
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
IEBO VEB = -4 V, IC = 0
hFE VCE = -2 V, IC = -0.5 A
VCE(sat) IC = -0.8 A, IB = -0.08 A
VBE(sat) IC = -0.8 A, IB = -0.08 A
fT VCE = -2 V, IC = -0.15 A
Cob VCB = -10 V, IE = 0 f=1MHz
hFE Classification
Marking
hFE
AH
85 170
AJ
120 240
Min Typ Max Unit
-25
V
-20
V
-5
V
-0.1 ìA
-0.1 ìA
85
240
-0.2 -0.3 V
-0.94 -1.1 V
200
MHz
38
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1