2SA965 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Product specification
TO-92MOD Plastic-Encapsulate Transistors
2SA965 TRANSISTOR (PNP)
FEATURES
z Complementary to 2SC2235
z Power Amplifier Applications
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-0.8
900
139
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-1mA,I_E=0
-120
V
V_(BR)CEO I_C=-10mA,I_B=0
-120
V
V_(BR)EBO I_E=-1mA,I_C=0
-5
V
I_CBO
V_CB=-120V,I_E=0
-0.1
μA
I_EBO
V_EB=-5V,I_C=0
-0.1
μA
h_FE
V_CE=-5V, I_C-100mA
80
240
V_CE(sat) I_C=-500mA,I_B=-50mA
-1
V
V_BE
V_CE=-5V, I_C=-0.5A
-1
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
40
pF
f_T
VCE=-5V,IC=-100mA
120
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
O
80-160
Y
120-240
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