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2SA940 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,150V,25W)
Product specification
2SA940
PNP Silicon Epitaxial Power Transistor
FEATURES
z Complements the 2SC2073.
APPLICATIONS
z Power Amplifier Applications.
z Vertical Output Applications.
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
COLLECTOR
2
BASE
1
1.27±0.20
1.52±0.20
2.40±0.20
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
1 23
TO-220C
2.54typ
2.54typ
Package Dimension
0.80±0.20
0.50±0.20
Dimensions in Millimeters
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-150
V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Ta=25℃
Tc=25℃
Junction and Storage Temperature
-150
V
-5
V
-1.5
A
-0.5
A
1.5
W
25
-55 to +150 ℃
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