2SA933AS Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Product specification
TO-92S Plastic-Encapsulate Transistors
2SA933AS TRANSISTOR (PNP)
FEATURES
·Excellent h_FE Linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current
-150 mA
P_C
Collector Power dissipation _{300 mW}
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~+150
℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_C=-50μA,I_E=0
I_C=-1mA,I_B=0
I_E=-50μA,I_C=0
V_CB=-60V, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE
V_CEsat
Transition frequency
f_T
V_EB= -6V, I_C=0
V_CE=-6 V, I_C= -1mA
I_C= -50mA, I_B=-5mA
V_CE=-12V, I_C=-2mA
f=30MHz
Min
Typ
-60
-50
-6
120
Max
-0.1
-0.1
560
-0.5
Unit
V
V
V
μA
μA
V
140
MHz
Collector output capacitance
C_ob
V_CB=-12V, I_C=0, f=1MHz
4
5
pF
CLASSIFICATION OF hFE
Rank
Range
Q
120-270
R
180-390
S
270-560
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4008-318-123
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