2SA836 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Product specification
TO-92 Plastic-Encapsulate Transistors
2SA836 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain
z Low Frequency Amplifier
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-55
-55
-5
-0.1
200
625
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C= -0.01mA,I_E=0
-55
V
V_(BR)CEO I_C=-1mA,I_B=0
-55
V
V_(BR)EBO I_E=-0.01mA,I_C=0
-5
V
I_CBO
V_CB=-18V,I_E=0
-0.1
μA
I_EBO
V_EB=-2V,I_C=0
-0.05 μA
h_FE
V_CE=-12V, I_C=-2mA
160
500
V_CE(sat) I_C=-10mA,I_B=-1mA
-0.5
V
V_BE
V_CE=-12V, I_C=-2mA
-0.75
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
4
pF
f_T
VCE=-12V,IC=-2mA
150
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
C
160-320
D
250-500
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