2SA821 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SA821 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z Low Transition Frequency
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-210
-210
-5
-0.03
250
500
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C= -0.05mA,I_E=0
-210
V
V_(BR)CEO I_C=-0.1mA,I_B=0
-210
V
V_(BR)EBO I_E=-0.05mA,I_C=0
-5
V
I_CBO
V_CB=-150V,I_E=0
-1
μA
I_EBO
V_EB=-4.5V,I_C=0
-1
μA
h_FE
V_CE=-3V, I_C=-5mA
56
270
V_CE(sat) I_C=-2mA,I_B=-0.2mA
-0.6
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
8
pF
f_T
VCE=-5V,IC= -2mA
50
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
N
56-120
P
82-180
Q
120-270
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