2SA733 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON TRANSISTOR

Product specification
2SA733
Features
Collector-Base Voltage: VCBO=-60V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector Current (DC)
Power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-60
-50
-5.0
-150
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Cob
NF
fT
Testconditons
IC= -5uA,IE=0
IC= -1mA , IB=0
IE= -50uA, IC=0
VCB= -60 V , IE=0
VEB= -5 V , IC=0
VCE= -6 V, IC=-1mA
IC= -100mA, IB=- 10mA
VCE=-6V,IC=-1.0mA
VCB=-10V,IE=0,f=1MHZ
VCE=-6V,IC=-0.3mA,Rg=10k? ,f=100HZ
VCE=-6V,IC=-10mA
Marking
M arki ng
Rang e
M6
200-400
CSL
12 0-220
CSH
220 -4 75
Min Typ Max Unit
-60
V
-50
V
-5
V
-0.1 uA
-0.1 uA
120
475
-0.18 -0.3 V
-0.58 -0.62 -0.68 V
4.5 7 pF
6 20 dB
50
MHz
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