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| 2SA720 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SA719/2SA720 TRANSISTOR (PNP)
FEATURES
For Low-Frequency Power Amplification
and Driver Amplification
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage 2SA719
2SA720
VCEO
Collector-Emitter Voltage 2SA719
2SA720
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
-30
-60
-25
-50
-5
-500
625
150
-55-150
Unit
V
V
V
mA
mW
â
â
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
2SA719
V(BR)CBO IC= -10uA, IE=0
-30
2SA720
-60
Collector-emitter breakdown voltage
2SA719
V(BR)CEO IC= -10mA ,IB=0
-25
2SA720
-50
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)EBO IE= -10uA, IC=0
-5
ICBO
VCB= -20V,IE=0
IEBO
VEB= -4V,IC=0
hFE(1)
VCE=-10V, IC= -150mA
85
hFE(2)
VCE=-10V, IC= -500mA
40
VCE(sat)
IC=-300mA, IB= -30mA
VBE(sat)
IC= -300mA, IB=-30mA
VCE= -10V, IC= -50mA
fT
f = 200MHz
Collector Output Capacitance
Cob
VCB=-10V,IE=0,f=1MHZ
CLASSIFICATION hFE(1)
Rank
Q
R
Range
85-170
120-240
Typ
Max Unit
V
V
V
-0.1
uA
-0.1
uA
340
-0.6
V
-1.5
V
200
MHz
15
pF
S
170-340
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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