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| 2SA673A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SA673A TRANSISTOR (PNP)
FEATURES
z Low Frequency Amplifier
z Complementary Pair with 2SC1213A
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-4
-0.5
400
312
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
Collector-emitter saturation voltage
hFE(1)
hFE(2)*
VCE(sat) *
Base-emitter voltage
VBE
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=-0.01mA,IE=0
IC=-1mA,IB=0
IE=-0.01mA,IC=0
VCB=-20V,IE=0
VEB=-3V,IC=0
VCE=-3V, IC=-10mA
VCE=-3V, IC=-500mA
IC=-150mA,IB=-15mA
VCE=-3V, IC=-10mA
Min Typ Max Unit
-50
V
-50
V
-4
V
-0.5
μA
-0.5
μA
60
320
10
-0.6
V
-0.75
V
CLASSIFICATION OF hFE(1)
RANK
B
RANGE
60-120
C
100-200
D
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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