2SA608S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

Product specification
TO-92S Plastic-Encapsulate Transistors
2SA608S TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-5
-0.1
300
417
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
C_ob
f_T
Test conditions
I_C=-0.1mA,I_E=0
I_C=-1mA,I_B=0
I_E=-0.1mA,I_C=0
V_CB=-25V,I_E=0
V_EB=-4V,I_C=0
V_CE=-6V, I_C=-1mA
I_C=-50mA,I_B=-5mA
V_CB=-6V, f=1MHz,I_E=0
VCE=-6V,IC=-10mA
Min Typ Max Unit
-40
V
-30
V
-5
V
-1
μA
-1
μA
60
560
-0.5
V
7
pF
180
MHz
CLASSIFICATION OF h_FE
RANK
D
RANGE
60-120
E
100-200
F
160-320
G
280-560
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